WNM3003 Datasheet, Will Semiconductor

SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshol.

Standard Product WNM3003 is Pb-free. Features SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper.

The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Stand.