WNMD2171 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package CSP 4L
- Part: WNMD2171
- Manufacturer: Will Semiconductor
- Size: 1.93 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNMD2172 | Dual N-Channel MOSFET |
| WNMD2173 | Dual N-Channel MOSFET |
| WNMD2174 | Dual N-Channel MOSFET |
| WNMD2179 | Dual N-Channel MOSFET |
| WNMD2153 | Dual N-Channel MOSFET |
WNMD2171 Description
Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2171 is available in CSP-4L package.