Datasheet Details
| Part number | WNMD2172 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.29 MB |
| Description | Dual N-Channel MOSFET |
| Download | WNMD2172 Download (PDF) |
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| Part number | WNMD2172 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.29 MB |
| Description | Dual N-Channel MOSFET |
| Download | WNMD2172 Download (PDF) |
|
|
|
s Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) 20 ESD.
| Part Number | Description |
|---|---|
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