WNMD2173 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package CSP 4L
- Part: WNMD2173
- Manufacturer: Will Semiconductor
- Size: 1.73 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNMD2171 | Dual N-Channel MOSFET |
| WNMD2172 | Dual N-Channel MOSFET |
| WNMD2174 | Dual N-Channel MOSFET |
| WNMD2179 | Dual N-Channel MOSFET |
| WNMD2153 | Dual N-Channel MOSFET |
WNMD2173 Description
WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET .sh-willsemi. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit.