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WNMD2174 Datasheet Dual N-Channel MOSFET

Manufacturer: Will Semiconductor

Datasheet Details

Part number WNMD2174
Manufacturer Will Semiconductor
File Size 1.55 MB
Description Dual N-Channel MOSFET
Download WNMD2174 Download (PDF)

General Description

s The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge.

This device is designed for Lithium-Ion battery protection circuit.

Overview

WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 19@ VGS=4.5V 20@ VGS=4.0V 12 22@ VGS=3.1V 25@ VGS=2.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package CSP 4L.