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PFP10N60 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.78 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP10N60
Manufacturer Wing On
File Size 1.10 MB
Description N-Channel MOSFET
Datasheet download datasheet PFP10N60 Datasheet

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Full PDF Text Transcription

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Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.78 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N60/PFF10N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.78 Ω ID = 9.5 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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