PFP830E Description
PFP830E.
PFP830E Key Features
- Originative New Design
- 100% EAS Test
- Rugged Gate Oxide Technology
- Extremely Low Intrinsic Capacitances
- Remarkable Switching Characteristics
- Unequalled Gate Charge : 10.5 nC (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V
- Electronic lamp ballasts based on half bridge topology
- PFC (Power Factor Correction)