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PFP830E - N-Channel MOSFET

Features

  • Originative New Design.
  • 100% EAS Test.
  • Rugged Gate Oxide Technology.
  • Extremely Low Intrinsic Capacitances.
  • Remarkable Switching Characteristics.
  • Unequalled Gate Charge : 10.5 nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) : 1.1 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP830E
Manufacturer Wing On
File Size 795.22 KB
Description N-Channel MOSFET
Datasheet download datasheet PFP830E Datasheet

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Full PDF Text Transcription

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PFP830E / PFF5N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP830E / PFF5N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(ON) = 1.1 Ω ID = 5.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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