Wing On PFP8N50
N-Channel MOSFET
| Part No. | PFP8N50 |
|---|---|
| Datasheet | PFP8N50 Download |
| Manufacturer | Wing On |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● 100% EAS Test
● Rugged Gate Oxide Technology
● Extremely Low Intrinsic Capacitances
● Remarkable Switching Characteristics
● Unequalled Gate Charge : 25 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION
● Electronic lamp ballasts based on half bridge topology
● PFC (Power Factor Correction)
● SMPS (Switched Mode Power Supplies) PFP8N50/PFF8N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) = 0.85 Ω ID = 8.0 A TO-220 Drain Gate
● ◀▲
●
● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PFP8N50 PFF8N50 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche
