Wing On PFP830E
N-Channel MOSFET
| Part No. | PFP830E |
|---|---|
| Datasheet | PFP830E Download |
| Manufacturer | Wing On |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● 100% EAS Test
● Rugged Gate Oxide Technology
● Extremely Low Intrinsic Capacitances
● Remarkable Switching Characteristics
● Unequalled Gate Charge : 10.5 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V APPLICATION
● Electronic lamp ballasts based on half bridge topology
● PFC (Power Factor Correction)
● SMPS (Switched Mode Power Supplies) PFP830E / PFF5N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(ON) = 1.1 Ω ID = 5.0 A TO-220 Drain Gate
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● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise specified Symbol Parameter PFP830E PFF5N50E VDSS Drain-Source Voltage 500 ID Drain Current – Continuous (TC = 25oC) 5.0 5.0* Drain Current – Continuous (TC = 100oC) 3.1 3.1* IDM Drain Current – Pulsed (Note 1) 20 20* VGS Gate-Source Voltage ±30 EAS
