PFP830E Datasheet | Wing On

FEATURES - Originative New Design - 100% EAS Test - Rugged Gate Oxide Technology - Extremely Low Intrinsic Capacitances - Remarkable Switching Characteristics - Unequalled Gate Charge : 10.5 n C (Typ.) - Extended Safe Operating Area - Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V APPLICATION - Electronic lamp ballasts based on half bridge topology - PFC (Power Factor Correction) - SMPS (Switched Mode Power Supplies) PFP830E / PFF5N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(ON) = 1.1 Ω ID = 5.0 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25o C unless otherwise specified Symbol Parameter PFF5N50E VDSS Drain-Source Voltage Drain Current - Continuous (TC = 25o C) 5.0 5.0- Drain Current - Continuous (TC = 100o C) 3.1 3.1-...