PFP8N80 Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 28.0 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.48 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP8N80 / PFF8N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.48 Ω ID = 8.0 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25o C unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note...