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PFU5N90G - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 3.2 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFU5N90G
Manufacturer Wing On
File Size 959.45 KB
Description N-Channel MOSFET
Datasheet download datasheet PFU5N90G Datasheet

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Full PDF Text Transcription

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PFU5N90G / PFD5N90G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU5N90G / PFD5N90G 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 3.2 Ω ID = 4.
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