PFW60R180 - N-Channel Super Junction MOSFET

Key Features

 New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate .
◀▲.
 Source TO-247 TO-3P.

PFW60R180 n-channel super junction mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFW60R180
Manufacturer	Wing On
File Size	2.59 MB
Description	N-Channel Super Junction MOSFET
Datasheet	PFW60R180 Datasheet

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Full PDF Text Transcription (Reference)

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PFJ60R180 / PFW60R180 PFJ60R180 / PFW60R180 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate  ● ◀▲ ● ●  Source TO-247 TO-3P APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.