The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SFTN5038R
N-Channel Enhancement Mode MOSFET
Drain
Gate Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current
Pulsed Drain Current
TC = 25℃ TC = 100℃
Power Dissipation Avalanche energy,single pulse
TC = 25℃
Maximum Thermal Resistance from Juntion to Case
Maximum Thermal Resistance from Juntion to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol VDS VGS
ID
IDM PD EAS RθJC RθJA TJ Tstg
Value
500
± 30 11 6.95 33 83 220 1.5 62.5 150 - 55 to + 150
Unit V V
A
A W mJ ℃/W ℃/W ℃ ℃
Winning Team
Dated: 19/01/2018
SFTN5038R
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol Min.
Typ.
Max.
SFTN5038R Datasheet
