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SFTN540
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
V
Drain Current Peak Drain Current
TC = 25℃ TC = 100℃
ID
20 14
A
IDM
110
A
Power Dissipation
TC = 25℃
Ptot
54
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
℃
Thermal Characteristics
Parameter
Symbol
Max.
Unit
Maximum Thermal Resistance from Juntion to Case
RθJC
2.8
K/W
Maximum Thermal Resistance from Juntion to Ambient
RθJA
65
K/W
Winning Team
Dated: 19/01/2017
SFTN540
Characteristics at TJ = 25℃ unless otherwise specified
Parameter
Symbol Min.
Typ.
Max.