SFTN5038R Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Power Dissipation Avalanche energy,single pulse TC = 25℃ Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS IDM PD EAS RθJC RθJA TJ Tstg Value ± 30 11 6.95 33 83 220 1.5 62.5 150 - 55 to + 150 Unit V V A W m J ℃/W ℃/W ℃ ℃ Winning Team 互創國際 Dated: 19/01/2018 Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 250 µA Drain-Source Leakage Current at VDS = 500 V Gate Leakage Current at VGS = ± 30 V Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA Drain-Source On-State Resistance at VGS = 10 V, ID = 3.8 A Input Capacitance at VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance at VGS = 0 V, VDS = 25 V, f = 1...