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WTBV53DMR - POWER TRANSISTOR

This page provides the datasheet information for the WTBV53DMR, a member of the WTBV53DM POWER TRANSISTOR family.

Features

  • High Voltage.
  • Very High Switch Speed.
  • BVCEO : 400V.
  • BVCBO : 800V.
  • IC : 2.5A.
  • VCE(SAT) : max1V@Ic / IB=1A/ 0.25A.
  • Silicon Triple Diffused Type.

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Datasheet preview – WTBV53DMR

Datasheet Details

Part number WTBV53DMR
Manufacturer Winsem Technology
File Size 417.07 KB
Description POWER TRANSISTOR
Datasheet download datasheet WTBV53DMR Datasheet
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Full PDF Text Transcription

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Winsem Technology Corp. High Voltage NPN Transistor WTBV53DM(R) / WTI53D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3. Emitter Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 800V • IC : 2.5A • VCE(SAT) : max1V@Ic / IB=1A/ 0.25A • Silicon Triple Diffused Type Application • Electronic Ballasts • Adapter • Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Version A12 Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 2.
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