* 60V, 60A
* RDS(ON) = 8.5mΩ (Max.) @ VGS = 10V, ID = 20A
* Low RDS(on) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
.

Silicon N-Channel MOSFET Features
* 60V, 60A
* RDS(ON) = 8.5mΩ (Max.) @ VGS = 10V, ID = 20A
* Low RDS(on) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
* Fast switching and soft recovery
* 100%.

SEG04G72B1BC2MT-30R

SEG10FG

SEG9296AGH

SEGC10DH

SEGC10GH

SEGC10JH

SEGC10KH

SEGC10MH

SE-350

SE-450

SE-B3

SE005N

SE012N

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