silicon n-channel mosfet.
* 100V, 150A
* RDS(ON) = 4.8mΩ (Max.) @ VGS = 10V, ID = 20A
* Low RDS(on) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
Silicon N-Channel MOSFET
Features
* 100V, 150A
* RDS(ON) = 4.8mΩ (Max.) @ VGS = 10V, ID = 20A
* Low RDS(on) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
* 100% UIS tested , 100% △VDS Tested
* .
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