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WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive.
WFF12N65L Datasheet
