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WFF12N65L Datasheet Preview

WFF12N65L Datasheet

Silicon N-Channel MOSFET

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WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
Ultra-low Gate charge(Typical 40nC)
Fast Switching Capability
100%Avalanche Tested
Enhanced EMI capability
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect
transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this
product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power
converter, and high H bridge PWM motor drive.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
(Note1)
(Note2)
(Note3)
Value
650
12
7.5
48
±30
550
5
42
0.34
-55~150
Units
V
A
A
A
V
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.0 /W
- - 62.5 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F118-Rev.A0 Nov 2015(F0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
1115




Winsemi

WFF12N65L Datasheet Preview

WFF12N65L Datasheet

Silicon N-Channel MOSFET

No Preview Available !

WFF12N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Symbol
IGSS
V(BR)GSS
IDSS
V(BR)DSS
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=650V,VGS=0V
VDS=520V,Tc=125
ID=250 µA,VGS=0V
VDS=VGS,ID=250 µA
VGS=10V,ID=6A
VDS=15V,ID=6A
VDS=25V,
VGS=0V,
f=1MHz
VDD=325V,
ID=12A
RG=10Ω
(Note3,4)
VDD=520V,
VGS=10V,
ID=12A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=12A,VGS=0V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
IDR=12A,VGS=0V,
Qrr
dIDR /dt =100 A /µs
Irrm
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
0.66
12
1994
9.5
161
26
27
46
65
Max
±100
-
1
100
-
4
0.8
-
-
-
-
-
-
-
-
Unit
nA
V
µA
µA
V
V
S
pF
ns
- 40 -
nC
- 11 -
- 13 -
Min Type Max Unit
- - 12 A
- - 48 A
- - 1.5 V
- 652 - ns
- 4.3 - µC
- 13.2 -
A
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=10mH IAS=10.5A,VDD=50V,RG=25Ω,Starting TJ=25
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
2/8


Part Number WFF12N65L
Description Silicon N-Channel MOSFET
Maker Winsemi
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WFF12N65L Datasheet PDF






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