WFP840 Description
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.
WFP840 Key Features
- 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 59nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)