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WFP840C - Power MOSFET

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 28nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP840C Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP840C
Manufacturer Winsemi
File Size 475.95 KB
Description Power MOSFET
Datasheet download datasheet WFP840C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP840C Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.