WFP840C Datasheet PDF

Winsemi WFP840C

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Part No.	WFP840C
Datasheet	WFP840C Download
Manufacturer	Winsemi
Description	Power MOSFET
Buy	Stock & Price

FEATURES

9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) WFP840C Silicon N-Channel MOSFET

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature TL Channel Temperature (Note1) (Note2) (Note1) (Note3) Value 500 9 5.4 36 ±30 360 13.5 4.5 130 1.07 -40~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol Parameter...