Winsemi WFP840
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFP840 |
|---|---|
| Datasheet | WFP840 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V● Ultra-low Gate Charge(Typical 59nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Channel Temperature *Drain current limited by junction temperature (Note1) (Note 2) (Note 1) (Note 3) Value 500 8 5.1 32 ±30 320 13.4 3.5 134 1.0 -55~150 300 Thermal Characteristics Symbol Parameter RQJC RQCS RQJ...
