WFP840 Datasheet | Winsemi

Silicon N-Channel MOSFET Features - 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V - Ultra-low Gate Charge(Typical 59nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp...