� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃).

Silicon N-Channel MOSFET Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description Th is Power MOSFET is p.

WFU1N60

WFU1N60N

WFU1N80

WFU20N06

WFU2N60

WFU2N60B

WFU2N65L

WFU430

WFU4N60

WFU4N65S

WFU5N50

WFU5N60

WFU5N60B

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