WFU730 Key Features
- 5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 32nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
- Part: WFU730
- Manufacturer: Winsemi
- Size: 722.55 KB
Related Winsemi Datasheets
| Part Number | Description |
|---|---|
| WFU7N65S | Power MOSFET |
| WFU7N70S | Power MOSFET |
| WFU1N60 | Silicon N-Channel MOSFET |
| WFU1N60C | Power MOSFET |
| WFU1N60N | Silicon N-Channel MOSFET |
WFU730 Description
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.