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WFU7N70S - Power MOSFET

General Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =19nC).
  • 100% UIS tested.
  • RoHS compl iant General.

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Datasheet Details

Part number WFU7N70S
Manufacturer Winsemi
File Size 251.95 KB
Description Power MOSFET
Datasheet download datasheet WFU7N70S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFU7N70S 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.