WFU7N70S Overview
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. D G S Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse...
WFU7N70S Key Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg =19nC)
- 100% UIS tested
- RoHS pl iant