WFU7N70S - Power MOSFET

Datasheet Summary

Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg =19nC).
100% UIS tested.
RoHS compl iant General.

Winsemi

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Datasheet Details

Part number	WFU7N70S
Manufacturer	Winsemi
File Size	251.95 KB
Description	Power MOSFET
Datasheet	WFU7N70S Datasheet
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WFU7N70S 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Published: Mar 26, 2017 |