WFU7N65S Datasheet PDF

Winsemi WFU7N65S

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Part No.	WFU7N65S
Datasheet	WFU7N65S Download
Manufacturer	Winsemi
Description	Power MOSFET
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FEATURES

Ultra low Rdson Ultra low gate charge (typ. Qg =19nC) 100% UIS tested RoHS compl iant

GENERAL DESCRIPTION

Power MOSFET is fabricated using advanced super junction technology. D G S

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Pulse Avalanche Current 1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature Is Continuous diode forward current Is,pulse Diode pulse current Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.IAS=2.5,VDD=60V,R G=25Ω ,Starting T