WFU7N65S - Power MOSFET

Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg =19nC).
100% UIS tested.
RoHS compl iant General.

Winsemi

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Datasheet Details

Part number	WFU7N65S
Manufacturer	Winsemi
File Size	252.47 KB
Description	Power MOSFET
Datasheet	WFU7N65S Datasheet
Additional preview pages of the WFU7N65S datasheet.

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Full PDF Text Transcription

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WFU7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Published: Mar 26, 2017 |