WFF2N60 Key Features
- RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Teste
- 1. Gate {
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFF2N60 | Power MOSFET |
Winsemi |
WFF2N60B | Power MOSFET |