WFF8N80
WFF8N80 is N-Channel MOSFET manufactured by Wisdom technologies.
Features
- RDS(on) (Max 1.6 Ω )@VGS=10V
- Gate Charge (Typical 39n C)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1. Gate{
{ 2. Drain
- ◀▲
- -
{ 3. Source
TO-220F
Absolute Maximum Ratings
- ( Drain current limited by junction temperature)
Symbol VDSS
IDM VGS EAS EAR dv/dt
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 800 8.0- 5.0- 32-
±30
850 17.8 4.5 59 0.48
- 55 ~ 150
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
- Value Typ.
- Max. 2.1...
