WFF8N80 Datasheet PDF (N-Channel MOSFET) | Download Wisdom technologies WFF8N80

WFF8N80 - N-Channel MOSFET

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

RDS(on) (Max 1.6 Ω )@VGS=10V.
Gate Charge (Typical 39nC).
Improved dv/dt Capability, High Ruggedness.
100% Avalanche Tested.
Maximum Junction Temperature Range (150°C) General.

Datasheet Details

Part number	WFF8N80
Manufacturer	Wisdom technologies
File Size	389.04 KB
Description	N-Channel MOSFET
Datasheet	WFF8N80 Datasheet
Additional preview pages of the WFF8N80 datasheet.

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Full PDF Text Transcription

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Wisdom Semiconductor WFF8N80 N-Channel MOSFET Features ■ RDS(on) (Max 1.6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3.

Published: Feb 1, 2016 |