WFF8N80 Key Features
- RDS(on) (Max 1.6 Ω )@VGS=10V
- Gate Charge (Typical 39nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
| Part Number | Description |
|---|---|
| WFF8N60 | HIGH VOLTAGE N-Channel MOSFET |
| WFF830 | N-Channel MOSFET |
| WFF840 | N-Channel MOSFET |
| WFF10N60 | N-Channel MOSFET |
| WFF12N60 | N-Channel MOSFET |