WFW10N80 Key Features
- RDS(on) (Max 1.05 Ω )@VGS=10V
- Gate Charge (Typical 55nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Part: WFW10N80
- Description: N-Channel MOSFET
- Manufacturer: Wisdom technologies
- Size: 139.52 KB
Related Wisdom technologies Datasheets
| Part Number | Description |
|---|---|
| WFW11N90 | N-Channel MOSFET |
| WFW20N60 | N-Channel MOSFET |
| WFW24N60 | N-Channel MOSFET |
| WFW28N60 | N-Channel MOSFET |
| WFW9N70 | N-Channel MOSFET |