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D
V+
G1 K1
Mid
CAB530M12BM3,
C
CAB530M12BM3T
1200 V, 530 A All-Silicon Carbide, Half-Bridge Module
Technical Features
• Industry Standard 62 mm Footprint
• Ultra Low Loss, High-Frequency Operation
B
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Copper Baseplate and Aluminum Nitride Insulator
G2
VDS K2
IDS
1200 V V5- 30 A
3
4 5
1
6 7
2
Applications
System BAenefits
• Railway & Traction
• Lightweight, Compact Form-Factor with 62 mm-
• EV Charging Infrastructure
Format Enables System Retrofit
• Industrial Automation & Testing
• Increased System Efficiency due to Low Switching &
• High-Frequency Power Supplies
Conduction Loss5es of SiC
4
3
2
• Renewable Energy Systems & Grid-Tied Inverters
• Active Front Ends & AC Inverte