CAB760M12HM3R module equivalent, half-bridge module.
* Low Inductance, Low Profile 62 mm Footprint
* High Junction Temperature (175 °C) Operation
* Implements Switching Optimized Third Generation
SiC MOSFET Tech.
* Railway & Traction
* Solar
* EV Chargers
* Industrial Automation & Testing
System Benefits
1
* L.
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