Datasheet Details
| Part number | CGH35060F2 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.36 MB |
| Description | GaN HEMT |
| Datasheet | CGH35060F2-Wolfspeed.pdf |
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Overview: CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT.
| Part number | CGH35060F2 |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.36 MB |
| Description | GaN HEMT |
| Datasheet | CGH35060F2-Wolfspeed.pdf |
|
|
|
Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications.
The transistor is supplied in a ceramic/metal flange and pill package.
Package Types: 440193 & 440206 PNs: CGH35060F2 & CGH35060P2 Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain POUT @ PIN = 36.5 dBm Gain @ PIN = 36.5 dBm Drain Efficiency @ PIN = 36.5 dBm Input Return Loss 3.1 GHz 12.0 47.0 10.4 55.0 -7.3 3.3 GHz 13.2 47.6 11.06 62.0 -17.0 3.5 GHz 11.5 46.7 10.1 62.0 -4.3 Note: Measured in the CGH35060F2-AMP amplifier circuit, under 100μs Pulse Width, 20% Duty Cycle and 28 V.
| Part Number | Description |
|---|---|
| CGH35060F1 | GaN HEMT |
| CGH35060P1 | GaN HEMT |
| CGH35060P2 | GaN HEMT |
| CGH35015 | GaN HEMT |
| CGH35030F | GaN HEMT |
| CGH35240F | GaN HEMT |
| CGH31240F | GaN HEMT |
| CGH09120F | GaN HEMT |
| CGH21120F | GaN HEMT |
| CGH21240F | GaN HEMT |