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GTVA104001FA - High Power RF GaN

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Wolfspeed

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GTVA104001FA High Power RF GaN by Wolfspeed - Datasheet Preview — Datasheet preview – GTVA104001FA

Datasheet Details

Part number	GTVA104001FA
Manufacturer	Wolfspeed
File Size	366.75 KB
Description	High Power RF GaN
Datasheet	GTVA104001FA Datasheet
Additional preview pages of the GTVA104001FA datasheet.

Product details

Description

The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band.

Features

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Performance at 1% Duty Cycle VDS = 50 V, IDQ = 100 mA, 128 µs.
1%, Tflange = 25°C 23 ergoqhgorgn' 2q2pjgfq4po5g 21 20 960 MHz 19 1030 MHz 1150 MHz 18 1215 MHz 1090 MHz 17 g104001fa-gr1 0 50 100 150 200 250 300 350 400 450 500 Output Power (W) GTVA104001FA Package H-37265J-2 Features.
GaN on SiC HEMT technology.
Input matched.
Typical pu.

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Published: Aug 11, 2020 |