GTVA104001FA Overview
Key Specifications
Description
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: pulse width = 128 μs, duty cycle = 10%, DC
- 1.4 GHz, VDS = 50 V, IDQ = 100 mA
- Output power = 400 W
