Datasheet Details
| Part number | YJL02N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 437.78 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJL02N10A-YangzhouYangjie.pdf
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The YJL02N10A is N-Channel Enhancement Mode Field Effect Transistor designed by Yangzhou Yangjie.
| Part number | YJL02N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 437.78 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJL02N10A-YangzhouYangjie.pdf
|
|
|
|
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) MSL LEVEL1 Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VDS 100 V VGS ±20 V 2 ID A 1.6 IDM 8 A Total Power Dissipation @ TA=25℃ Therma
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