YJL02N10A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJL02N10A General Description

* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) * MSL LEVEL1 Applications * DC-DC Converters * Power management functions * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol.

YJL02N10A Datasheet (437.78 KB)

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YJL02N10A

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Yangzhou Yangjie

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437.78 KB

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N-channel enhancement mode field effect transistor.
YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=10V) RDS.

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YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJL02N10A General Description

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