Datasheet Details
| Part number | YJL02N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 437.78 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJL02N10A Download (PDF) |
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| Part number | YJL02N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 437.78 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJL02N10A Download (PDF) |
|
|
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● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● MSL LEVEL1 Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VDS 100 V VGS ±20 V 2 ID A 1.6 IDM 8 A Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B PD RθJA 1.2 W 105 ℃/ W Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+150 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL02N10A F2 1002.
3000 30000 120000 7“ reel S-S1634 Rev.2.0,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com YJL02N10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 IGSS2 VGS= ±20V, VDS=0V VGS= ±10V, VDS=0V ±100 nA ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1 1.8 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=2A VGS= 4.5V, ID=1.5A 250 280 mΩ 260 300 Diode Forward Voltage VSD IS=2A,VGS=0V 0.8 1.2 V Maximum Body-Diode Continuous Current IS 2 A Dynamic Parameters Input Capacitance Ciss 320 Output Capacitance Coss VDS=50V,VGS=0V,f=1MHZ 88 pF Reverse Transfer Capacitance Crss 17 Switching Parameters Total Gate Charge Qg 5.3 Gate-Source Charge Qgs VGS=10V,VDS=50V,I
YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
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