Datasheet Details
| Part number | YJL03N06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 466.53 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJL03N06A Download (PDF) |
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| Part number | YJL03N06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 466.53 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJL03N06A Download (PDF) |
|
|
|
● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VGS ±20 V 3 ID A 2.4 IDM 12 A Total Power Dissipation @ TC=25℃ Thermal Resistance Junction-to-Ambient B PD RθJA 1.2 W 105 ℃/ W Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+150 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03N06A F2 S10.
3000 30000 120000 7“ reel S-S1967 Rev.2.1,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com YJL03N06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 IGSS2 VGS= ±20V, VDS=0V VGS= ±10V, VDS=0V ±100 nA ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1 1.3 2 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=3A VGS= 4.5V, ID=2A 81 100 mΩ 88 120 Diode Forward Voltage VSD IS=3A,VGS=0V 0.8 1.2 V Maximum Body-Diode Continuous Current IS 3 A Dynamic Parameters Input Capacitance Ciss 325 Output Capacitance Coss VDS=30V,VGS=0V,f=1MHZ 90 pF Reverse Transfer Capacitance Crss 17 Switching Parameters Total Gate Charge Qg 5.1 Gate-Source Charge Qgs VGS=10V,VDS=30V,ID=3A 1.3 nC Gate-Dr
YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
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