Datasheet Details
| Part number | YJL03N06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 466.53 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJL03N06A-YangzhouYangjie.pdf
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The YJL03N06A is N-Channel Enhancement Mode Field Effect Transistor designed by Yangzhou Yangjie.
| Part number | YJL03N06A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 466.53 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJL03N06A-YangzhouYangjie.pdf
|
|
|
|
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VGS ±20 V 3 ID A 2.4 IDM 12 A Total Power Dissipation @ TC=25℃ Thermal Resistance Jun
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