Datasheet Details
| Part number | YJL2305B |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 642.52 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJL2305B-YangzhouYangjie.pdf
|
| Part number | YJL2305B |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 642.52 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJL2305B-YangzhouYangjie.pdf
|
Trench Power LV MOSFET technology High Density Cell Design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ Steady State TA=70℃ Steady State Total Power Dissipation @ TA=25℃ Steady State Thermal Resistance Junction-to-Ambient @
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