YJL2305B Datasheet - Yangzhou Yangjie

P-Channel Enhancement Mode Field Effect Transistor

YJL2305B General Description

* Trench Power LV MOSFET technology * High Density Cell Design for Low RDS(ON) * High Speed switching Applications * Battery protection * Load switch * Power management * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so.

YJL2305B Datasheet (642.52 KB)

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YJL2305B

Manufacturer:

Yangzhou Yangjie

File Size:

642.52 KB

Description:

P-channel enhancement mode field effect transistor.
YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=-4.5V) RD.

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YJL2305B P-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJL2305B General Description

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