YJL2305B - P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Trench Power LV MOSFET technology High Density Cell Design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

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YJL2305B p-channel enhancement mode field effect transistor by Yangzhou Yangjie - Datasheet Preview

Datasheet Details

Part number	YJL2305B
Manufacturer	Yangzhou Yangjie
File Size	642.52 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJL2305B Datasheet

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YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -5.