YJL2312A - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power LV MOSFET technology
High Power and current handing capability
Applications
PWM application
Load switch
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
20
V
Gate-source Voltage
VGS
TA
N-Channel Enhancement Mode Field Effect Transistor
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YJL2312A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V)
20V
6.8A ＜18 mohm ＜22 mohm ＜39 mohm
General Description
● Trench Power LV MOSFET technology ● High Power and current handing capability
Applications
● PWM application ● Load switch
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
20
V
Gate-source Voltage
VGS
TA=25℃ @ Steady State
Drain Current
TA=70℃ @ Steady State
ID
Pulsed Drain Current A
IDM
±10
V
6.8 A
5.4
27
A
Total Power Dissipation @ TA=25℃
PD
1.
YJL2312A Datasheet
