YJL2312A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJL2312A General Description

* Trench Power LV MOSFET technology * High Power and current handing capability Applications * PWM application * Load switch * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS TA.

YJL2312A Datasheet (592.80 KB)

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YJL2312A

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Yangzhou Yangjie

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592.80 KB

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N-channel enhancement mode field effect transistor.
YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=4.5V) RDS.

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YJL2312A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJL2312A General Description

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