YJL3416A - N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Description
Trench Power LV MOSFET technology
High Power and current handing capability
Applications
PWM application
Load switch
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current Pulse
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YJL3416A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
20V
● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V)
6.0A ＜18 mohm ＜22 mohm ＜39 mohm
● ESD Protected Up to 3.5KV (HBM)
General Description
● Trench Power LV MOSFET technology ● High Power and current handing capability
Applications
● PWM application ● Load switch
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current Pulsed Drain Current A
TA=25℃ @ Steady State TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃
Thermal Resistance Junction-to-Ambient @ Steady State
Junction and Storage Temperature Range
VDS VGS
ID
IDM PD RθJA TJ ,TSTG
20 ±12 7.0 5.6
25 1.
YJL3416A Datasheet
