YJQ4666C - P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Trench Power LV MOSFET technology Low RDS(ON) Low Gate Charge Applications Battery charge Load switching in Cellular handset Ultraportable applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source

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Datasheet Details

Part number	YJQ4666C
Manufacturer	Yangzhou Yangjie
File Size	580.66 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJQ4666C Datasheet

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Part Number	Description	Manufacturer

Other Datasheets by Yangzhou Yangjie

Part Number	Description
YJQ4666A	P-Channel Enhancement Mode Field Effect Transistor
YJQ4666B	P-Channel Enhancement Mode Field Effect Transistor

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YJQ4666C RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.