YJS15G10B Description
Calculated continuous current based on maximum allowable junction temperature. pulse width limited by max. VDD=50V, RG=50Ω, L=0.3mH, starting TJ=25.
YJS15G10B is N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangjie Electronic.
| Part Number | Description |
|---|---|
| YJS12G06A | N-Channel Enhancement Mode Field Effect Transistor |
| YJS12G06D | N-Channel Enhancement Mode Field Effect Transistor |
| YJS05GP10A | P-Channel Enhancement Mode Field Effect Transistor |
Calculated continuous current based on maximum allowable junction temperature. pulse width limited by max. VDD=50V, RG=50Ω, L=0.3mH, starting TJ=25.