YJS05GP10A - P-Channel Enhancement Mode Field Effect Transistor

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Description

Split gate trench MOSFET technology High density cell design for low RDS(ON) Low Crss(Typ.25pF) Moisture Sensitivity Level 3 Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Applications DC motor control power supplies Absolute Maximum Ra

Yangzhou Yangjie

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Part number	YJS05GP10A
Manufacturer	Yangzhou Yangjie
File Size	799.13 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJS05GP10A Datasheet
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YJS05GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% EAS Tested ● 100% ▽VDS Tested -100V -4.5A ＜110 mohm ＜120 mohm General Description ● Split gate trench MOSFET technology ● High density cell design for low RDS(ON) ● Low Crss(Typ.25pF) ● Moisture Sensitivity Level 3 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free Applications ● DC motor control ● power supplies ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Avalanche energy B TA=25℃ TA=100℃ VDS -100 V VGS ±20 V -4.5 ID A -2.

Published: Nov 15, 2024 |