YJS05GP10A - P-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Split gate trench MOSFET technology
High density cell design for low RDS(ON)
Low Crss(Typ.25pF)
Moisture Sensitivity Level 3
Epoxy Meets UL 94 V-0 Flammability Rating
Halogen Free
Applications
DC motor control
power supplies
Absolute Maximum Ra
N-Channel Enhancement Mode Field Effect Transistor
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YJS05GP10A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% EAS Tested ● 100% ▽VDS Tested
-100V
-4.5A ＜110 mohm ＜120 mohm
General Description
● Split gate trench MOSFET technology ● High density cell design for low RDS(ON) ● Low Crss(Typ.25pF) ● Moisture Sensitivity Level 3 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free
Applications
● DC motor control ● power supplies
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage Gate-source Voltage
Drain Current
Pulsed Drain Current A Avalanche energy B
TA=25℃ TA=100℃
VDS
-100
V
VGS
±20
V
-4.5
ID
A
-2.
YJS05GP10A Datasheet
