Datasheet Details
| Part number | YJS05GP10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 799.13 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJS05GP10A Datasheet
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| Part number | YJS05GP10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 799.13 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJS05GP10A Datasheet
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|
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Split gate trench MOSFET technology High density cell design for low RDS(ON) Low Crss(Typ.25pF) Moisture Sensitivity Level 3 Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Applications DC motor control power supplies Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Avalanche energy B TA=25℃ TA=100℃ VDS -100 V VG
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