Datasheet Details
| Part number | YJS15G10B |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 588.29 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS15G10B-YangzhouYangjie.pdf |
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Overview: YJS15G10B RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜9.5 mohm ＜12.
| Part number | YJS15G10B |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 588.29 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS15G10B-YangzhouYangjie.pdf |
|
|
|
● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery Applications ● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current A Pulsed Drain Current B Avalanche energy C TC=25℃ TC=25℃ Total Power Dissipation D Tc=25℃ Tc=100℃ Thermal Resistance, junction-ambient E Junction and Storage Temperature Range VDS VGS ID IDM EAS PD RθJA TJ ,TSTG 100 ±20 15 64 130 4 1.6 31 -55～+150 V V A A mJ W ℃/ W ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS15G10B F2 Q15N10B 4000 8000 64000 13“ reel S-S2039 Rev.2.0,25-Jan-19 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
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YJS15G10B ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS IGSS VDS=100V,VGS=0V VGS= ±20V, VDS=0V 1 μA ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.3 1.8 2.3 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=12A VGS= 4.5V, ID=9A 7.7 9.5 mΩ 9.2 12.5 Diode Forward Voltage VSD IS=15A,VGS=0V 1.3 V Maximum Body-Diode Continuous Current IS 15 A Dynamic Parameters Input Capacitance Ciss 3530 Output Capacitance Coss VDS=50V,VGS=0V,f=1MHZ 560 pF Reverse Transfer Capacitance Crss 9.0 Switching Parame
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