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YJS15G10B - N-Channel Enhancement Mode Field Effect Transistor

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Description

Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Absolute Maximum R

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Datasheet Details

Part number YJS15G10B
Manufacturer Yangzhou Yangjie
File Size 588.29 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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YJS15G10B RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜9.5 mohm ＜12.
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