CJ3400A - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Details

Part number	CJ3400A
Manufacturer	ZPSEMI
File Size	1.08 MB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CJ3400A Datasheet

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Other Datasheets by ZPSEMI

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CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0A SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±12 5.8 30 400 313 150 -55~+150 Unit V V A A mW ℃/W ℃ ℃ sales@zpsemi.com www.zpsemi.