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BSS123A Datasheet Preview

BSS123A Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 1998
FEATURES
* BVDSS = 100V
* Low Threshold
PARTMARKING DETAIL
– SAA
BSS123A
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Drain-Gate Voltage
VDGR
100 V
Continuous Drain Current at Tamb=25°C
ID
170 mA
Pulsed Drain Current
IDM 680 mA
Gate-Source Voltage
VGS
± 20 V
Power Dissipation at Tamb=25°C
Ptot
360 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 100
V ID=0.25mA, VGS=0V
Gate-Source Threshold VGS(th)
Voltage
0.5
2.0 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
50 nA
500 nA
VGS=± 20V, VDS=0V
VDS=100V, VGS=0V
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
RDS(on)
gfs
80
6
10
VGS=10V, ID=170mA
VGS=4.5V, ID=170mA
mS VDS=25V, ID=100mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
25 pF
9 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
4 pF
Turn-On Delay Time (2)(3) td(on)
10 ns
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3) td(off)
10 ns VDD 30V, ID=280mA
15 ns
Fall Time (2)(3)
tf
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator


Part Number BSS123A
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Maker Zetex Semiconductors
Total Page 1 Pages
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