BSS123 Datasheet | Specifications & PDF Download

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field e

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N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(

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SMD Power MOSFET Transistor (N-Channel) BSS123 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:6Ω • Low input capacitance:20pF •

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th

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MOSFET – Power 170 mAmps, 100 Volts N−Channel SOT−23 BSS123LT1G, BVSS123LT1G Features • BVSS Prefix for Automotive and Other Applications Requiring U

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UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@

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ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola

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CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : 2016.12.07 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BS

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CYStech Electronics Corp. N-CHANNEL MOSFET BVDSS ID Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 1/8 100V VGS=10

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LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G FEATURE ƽ Pb-Free Package is available. ƽ S- Prefix for Automotive and Other Applicati

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors ar

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Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES • ’Trench’ technology • Extremely fast

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

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BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Sym

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BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description and Application Th

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CYStech Electronics Corp. Spec. No. : C591N3 Issued Date : 2016.12.07 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123BKN3 B

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Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17

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N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect trans

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