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BSS123A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • BVDSS = 100V.
  • Low Threshold.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 ± 20 360 -55 to +150 UNIT V V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).