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BSS123 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Bruckewell Technology

Overview: BSS123 N-Channel ENHANCEMENT MODE MOSFET.

General Description

These N-Channel enhancement mode field effect transistors uses advanced trench technology.

These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as: • Small Servo Motor Control • Power MOSFET Gate Drivers • Switching Applications

Key Features

  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • High Drain-Source Voltage Rating.
  • RoHS compliant package Mechanical Data.
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208.

BSS123 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
JCET Logo BSS123 N-Channel MOSFET JCET
NXP Logo BSS123 N-channel transistor Logic level FET NXP
Fairchild Semiconductor Logo BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor
UTC Logo BSS123 N-CHANNEL POWER MOSFET UTC
PAN JIT Logo BSS123 100V N-Channel Enhancement Mode MOSFE PAN JIT

More Datasheets from Bruckewell Technology

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BSS84 P-Channel MOSFET
BSS84DW P-Channel Enhancement Mode MOSFET

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