BSS123 Datasheet | Bruckewell Technology

N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: - Small Servo Motor Control - Power MOSFET Gate Drivers - Switching Applications Features - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - High Drain-Source Voltage Rating - Ro HS pliant package Mechanical Data - Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208 - Terminal Connections: See Diagram - Weight: 0.008 grams (Approximate) Package type：SOT-23 Packing & Order Information 3,000/Reel Publication Order Number: [BSS123] © Bruckewell Technology Corporation Rev. A -2014 N-Channel ENHANCEMENT MODE MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (TA=+25°C unless otherwise...