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BSS123 - N-Channel ENHANCEMENT MODE MOSFET

General Description

transistors uses advanced trench technology.

switching performance.

Key Features

  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • High Drain-Source Voltage Rating.
  • RoHS compliant package Mechanical Data.
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208.

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Datasheet Details

Part number BSS123
Manufacturer Bruckewell
File Size 377.80 KB
Description N-Channel ENHANCEMENT MODE MOSFET
Datasheet download datasheet BSS123 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These Graphic symbol products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: • Small Servo Motor Control • Power MOSFET Gate Drivers • Switching Applications Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating • RoHS compliant package Mechanical Data • Case Material: Molded Plastic.