BSS123 Datasheet N-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: onsemi

Overview: N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General.

Datasheet Details

Part number	BSS123
Manufacturer	onsemi
File Size	215.50 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	BSS123-ONSemiconductor.pdf

General Description

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Features

0.17 A, 100 V.
RDS(on) = 6 W @ VGS = 10 V.
RDS(on) = 10 W @ VGS = 4.5 V.
High Density Cell Design for Extremely Low RDS(on).
Rugged and Reliable.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
23.
3 CASE 318.
08.

BSS123 Distributor

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