BSS123 Datasheet | onsemi

N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features - 0.17 A, 100 V - RDS(on) = 6 W @ VGS = 10 V - RDS(on) = 10 W @ VGS = 4.5 V - High Density Cell Design for Extremely Low RDS(on) - Rugged and Reliable -...