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Zetex Semiconductors

ZXMN6A09G Datasheet Preview

ZXMN6A09G Datasheet

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A09G
SUMMARY
V(BR)DSS= 60V; RDS(ON)= 0.045 ID= 5.1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A09GTA
ZXMN6A09GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
ZXMN
6A09
SOT223
Top View
PROVISIONAL ISSUE D - SEPTEMBER 2003
1
SEMICONDUCTORS




Zetex Semiconductors

ZXMN6A09G Datasheet Preview

ZXMN6A09G Datasheet

60V N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

ZXMN6A09G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous
Drain
Current
(VGS=10V;
(VGS=10V;
(VGS=10V;
TTTAAA===272505°°°CCC)))(((bba)))
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
THERMAL RESISTANCE
LIMIT
60
Ϯ20
6.9
5.6
5.0
30.6
3.5
30.6
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
RθJA
RθJA
62.5
32.2
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
SEMICONDUCTORS
PROVISIONAL ISSUE D - SEPTEMBER 2003
2


Part Number ZXMN6A09G
Description 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Zetex Semiconductors
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ZXMN6A09G Datasheet PDF






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