CSD17308Q3 Overview
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. (2) Max RθJC = 4.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. CSD17308Q3 SLPS262C FEBRUARY 2010 REVISED DECEMBER 2019 .ti.
CSD17308Q3 Key Features
- 1 Optimized for 5-V gate drive
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS pliant
- Halogen free
- VSON 3.3 mm × 3.3 mm plastic package