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CSD17308Q3 - N-Channel MOSFET

General Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Key Features

  • 1 Optimized for 5-V gate drive.
  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • VSON 3.3 mm × 3.3 mm plastic package 2.

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Full PDF Text Transcription (Reference)

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD17308Q3 SLPS262C – FEBRUARY 2010 – REVISED DECEMBER 2019 CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs 1 Features •1 Optimized for 5-V gate drive • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • VSON 3.3 mm × 3.3 mm plastic package 2 Applications • Notebook point of load • Point-of-load synchronous buck in networking, telecom, and computing systems 3 Description This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.