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CSD17308Q3 Datasheet Preview

CSD17308Q3 Datasheet

N-Channel MOSFET

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CSD17308Q3
SLPS262C – FEBRUARY 2010 – REVISED DECEMBER 2019
CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs
1 Features
1 Optimized for 5-V gate drive
• Ultra-low Qg and Qgd
• Low thermal resistance
• Avalanche rated
• Lead-free terminal plating
• RoHS compliant
• Halogen free
• VSON 3.3 mm × 3.3 mm plastic package
2 Applications
• Notebook point of load
• Point-of-load synchronous buck in networking,
telecom, and computing systems
3 Description
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications and
optimized for 5-V gate drive applications.
Top View
S 8D
S 7D
S 6D
D
G 5D
P0095-01
Product Summary
TA = 25°C
VDS Drain-to-source voltage
Qg Gate charge total (4.5 V)
Qgd Gate charge gate-to-drain
RDS(on) Drain-to-source on-resistance
VGS(th) Threshold voltage
VALUE
30
3.9
0.8
VGS = 3 V
VGS = 4.5 V
VGS = 8 V
1.3
12.5
9.4
8.2
UNIT
V
nC
nC
mΩ
V
Device Information(1)
DEVICE QTY MEDIA
PACKAGE
CSD17308Q3 2500
13-Inch
Reel
SON 3.30 mm × 3.30 mm
Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current (package limited)
VALUE
30
+10 / –8
50
UNIT
V
V
ID Continuous drain current, TC = 25°C
Continuous drain current(1)
44
14
IDM Pulsed drain current, TA = 25°C(2)
Power dissipation(1)
PD Power dissipation, TC = 25°C
167
2.7
28
TJ,
Tstg
Operating junction and storage temperature –55 to 150
EAS
Avalanche energy, single pulse
ID = 36 A, L = 0.1 mH, RG = 25 Ω
65
A
A
W
°C
mJ
(1) Typical RθJA = 46°C/W when mounted on a 1-in2 (6.45-cm2),
2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick
FR4 PCB.
(2) Max RθJC = 4.5°C/W, pulse duration 100 μs, duty cycle
1%.
RDS(on) vs VGS
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
D007
1
8
ID = 10 A
7 VDS = 15 V
Gate Charge
6
5
4
3
2
1
0
01234567
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD17308Q3 Datasheet Preview

CSD17308Q3 Datasheet

N-Channel MOSFET

No Preview Available !

CSD17308Q3
SLPS262C – FEBRUARY 2010 – REVISED DECEMBER 2019
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 5
6 Device and Documentation Support.................... 8
6.1 Support Resources ................................................... 8
6.2 Trademarks ............................................................... 8
6.3 Electrostatic Discharge Caution ................................ 8
6.4 Glossary .................................................................... 8
7 Mechanical, Packaging, and Orderable
Information ............................................................. 9
7.1 Q3 Package Dimensions .......................................... 9
7.2 Recommended PCB Pattern................................... 10
7.3 Recommended Stencil Opening ............................. 10
7.4 Q3 Tape and Reel Information................................ 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (October 2015) to Revision C
Page
• Changed VGS(th) MAX specification in the Electrical Characteristics table, From 1.8 V : To 1.6 V ........................................ 3
Changes from Revision A (February 2010) to Revision B
Page
• Added part number to title ..................................................................................................................................................... 1
• Added Package Limited Continuous Drain Current ............................................................................................................... 1
• Added line for Power Dissipation, TC = 25°C in Absolute Maximum Ratings table ............................................................... 1
• Updated pulsed current conditions ........................................................................................................................................ 1
• Updated Figure 1 to show RθJC curves ................................................................................................................................... 5
• Added 4.5 V curve in Figure 8................................................................................................................................................ 6
• Updated Figure 10.................................................................................................................................................................. 7
• Added the Device and Documentation Support section ........................................................................................................ 8
• Updated the Mechanical, Packaging, and Orderable Information section ............................................................................. 9
Changes from Original (February 2010) to Revision A
Page
• Deleted the Package Marking Information section............................................................................................................... 11
2 Submit Documentation Feedback
Copyright © 2010–2019, Texas Instruments Incorporated
Product Folder Links: CSD17308Q3


Part Number CSD17308Q3
Description N-Channel MOSFET
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